Method using silicon-containing underlayers

ABSTRACT

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

This application claims the benefit of U.S. application Ser. No. 62/434,072, filed on Dec. 14, 2016.

The present invention relates generally to underlayers and methods of using them, and particularly to wet-strippable silicon-containing underlayers and their use in the manufacture of electronic devices.

In conventional photolithographic processes, the resist pattern is used as a mask for pattern transfer to the substrate by suitable etching processes, such as by reactive ion etch (RIE). The continued decrease in the thickness of the resist used makes the resist pattern unsuitable as a mask for pattern transfer by RIE processes. As a result, alternate processes have been developed using three, four or more layers as a mask for pattern transfer. For example, in a trilayer process a silicon-containing antireflective layer is disposed between an underlayer/organic planarizing layer and the resist layer. Due to the alternating selectivity towards fluorine and oxygen-containing RIE chemistry these layers possess, this trilayer scheme provides highly selective pattern transfer from the resist pattern on top of the Si-containing layer into the substrate below the underlayer.

The resistance of the silicon-containing underlayer toward oxide-etch chemistry allows this layer to function as an etch mask. Such silicon-containing underlayers are comprised of a crosslinked siloxane network. The etch resistance of these materials results from the silicon content, with a higher silicon content providing better etch resistance. In current 193 nm lithographic processes, such silicon-containing underlayers contain ≥40% silicon. Such high silicon content and siloxane network structure in these materials makes their removal challenging. Fluorine-containing plasma and hydrofluoric acid (HF) can both be used to remove (or strip) these silicon-containing layers. However, both F-plasma and HF will remove not only these silicon-containing materials but also other materials that are desired to remain, such as the substrate. Wet stripping using tetramethylammonium hydroxide (TMAH) in higher concentrations, such as ≥5 wt %, can be used to remove at least some of these silicon-containing layers, but these higher concentrations of TMAH also risk damaging the substrate. Silicon-containing layers having a relatively lower amount of silicon (≤17%) can sometimes be removed using “piranha acid” (concentrated H₂SO₄+30% H₂O₂), but such an approach has not proved successful with silicon-containing materials having higher silicon content.

Cao et al., Langmuir, 2008, 24, 12771-12778, have reported microgels formed by free radical copolymerization of N-isopropyl acrylamide and 3-(trimethoxysilyl)propyl methacrylate, followed by cross-linking via hydrolysis and condensation of the methoxysilyl groups. Cao et al. describe such materials as being useful in biological applications, such as controlled drug release materials, biosensors and in tissue engineering. U.S. Pat. No. 9,120,952 employ materials similar to those disclosed in the Cao et al. reference for use in chemical mechanical planarization processing.

U.S. Published Pat. App. No. 2016/0229939 discloses a composition for forming a silicon-containing resist underlayer having improved adhesion with an upper resist pattern. The compositions disclosed in this reference use a silicon-containing polymer comprising a repeating unit having a phenyl, naphthalene or anthracene group pendent from the polymer backbone, wherein the phenyl, naphthalene or anthracene group is substituted by

where L represents H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group, and * indicates the point of attachment to the phenyl, naphthalene or anthracene group; and a repeating unit having a pendent silicon group containing one or more of hydroxy or alkoxy bonded to the silicon. The silicon-containing polymer may be combined with a silane compound and the mixture subjected to hydrolysis or condensation. According to this reference, it is the presence of the OL group on the carbon directly bonded to the aromatic ring, which serves as a leaving group that changes the film surface, which as a result, improves the pattern adhesiveness. An advantage of these compositions is that pattern collapse hardly occurs in the formation of a fine pattern. This reference does not address the need for silicon-containing underlayers that can be removed by wet stripping.

The present invention provides a composition comprising: (a) one or more solvents; and (b) a polymer composition comprising one or more condensates and/or hydrolyzates of (i) one or more polymers comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and (ii) one or more condensable silicon monomers; wherein the one or more polymers are free of a pendent aromatic ring having a substituent of the formula

where each Rx is independently H or a alkyl group of 1 to 15 carbons, where each Rx may be taken together form an aliphatic ring; Lg is H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group; a1=0 or 1; and * indicates the point of attachment to the aromatic ring. Such condensable silicon monomer being different from the first unsaturated monomer having a condensable silicon-containing moiety. The present polymers are preferably free of repeating units of a monomer having two or more radical polymerizable double bonds. Preferably, the present polymers are free of fluoroalkyl substituents.

Further, the present invention provides a composition comprising (a) one or more solvents; and (b) one or more condensed polymers having an organic polymer chain having pendently-bound siloxane moieties, wherein the one or more condensed polymers are free of a pendent aromatic ring having a substituent of the formula

where each Rx is independently H or a alkyl group of 1 to 15 carbons, where each Rx may be taken together form an aliphatic ring; Lg is H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group; a1=0 or 1; and * indicates the point of attachment to the aromatic ring.

The present invention further provides a method comprising (a) coating a substrate with a composition described above, to form a coating layer; (b) curing the coating layer to form a polymeric underlayer; (c) disposing a layer of a photoresist on the polymeric underlayer; (d) pattern-wise exposing the photoresist layer to form a latent image; (e) developing the latent image to form a patterned photoresist layer having a relief image therein; (f) transferring the relief image to the substrate; and (g) removing the polymeric underlayer by wet stripping. The present polymeric underlayer is a polymeric silicon-containing underlayer.

Also provided by the present invention is a coated substrate comprising a coating layer of a condensate and/or hydrolyzate of (i) one or more polymers comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and (ii) one or more condensable silicon monomers on an electronic device substrate wherein the one or more polymers are free of a pendent aromatic ring having a substituent of the formula

where each Rx is independently H or a alkyl group of 1 to 15 carbons, where each Rx may be taken together form an aliphatic ring; Lg is H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group; a1=0 or 1; and * indicates the point of attachment to the aromatic ring.

Still further, the present invention is a coated substrate comprising a coating layer of one or more condensed polymers having an organic polymer chain having pendently-bound siloxane moieties on an electronic device substrate; wherein the one or more condensed polymers are free of a pendent aromatic ring having a substituent of the formula

where each Rx is independently H or a alkyl group of 1 to 15 carbons, where each Rx may be taken together form an aliphatic ring; Lg is H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group; a1=0 or 1; and * indicates the point of attachment to the aromatic ring.

It will be understood that when an element is referred to as being “adjacent” to or “on” another element, it can be directly adjacent to or on the other element or intervening elements may be present therebetween. In contrast, when an element is referred to as being “directly adjacent” or “directly on” another element, there are no intervening elements present. It will be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.

As used throughout this specification, the following abbreviations shall have the following meanings, unless the context clearly indicates otherwise: ° C.=degree Celsius; g=gram; mg=milligram; ppm=part per million by weight unless otherwise noted; μm=micron=micrometer; nm=nanometer; Å=angstrom; L=liter; mL=milliliter; sec.=second; min.=minute; hr.=hour; and Da=dalton. All amounts are percent by weight and all ratios are molar ratios, unless otherwise noted. All numerical ranges are inclusive and combinable in any order, except where it is clear that such numerical ranges are constrained to add up to 100%. “Wt %” refers to percent by weight, based on the total weight of a referenced composition, unless otherwise noted. The articles “a”, “an” and “the” refer to the singular and the plural. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. M_(w) refers to weight average molecular weight and is determined by gel permeation chromatography (GPC) using polystyrene standards.

As used throughout the specification, the term “alkyl” includes linear, branched and cyclic alkyl. The term “alkyl” refers to an alkane radical, and includes alkane monoradicals, diradicals (alkylene), and higher-radicals. If no number of carbons is indicated for any alkyl or heteroalkyl, then 1-12 carbons are contemplated. The term “heteroalkyl” refers to an alkyl group with one or more heteroatoms, such as nitrogen, oxygen, sulfur, phosphorus, replacing one or more carbon atoms within the radical, for example, as in an ether or a thioether. The term “alkenyl” refers to an alkene radical, and includes alkene monoradicals, diradicals (alkenylene), and higher-radicals. “Alkenyl” refers to linear, branched and cyclic alkene radicals unless otherwise specified. The term “alkynyl” refers to an alkyne radical, and includes alkyne monoradicals, diradicals, and higher-radicals. “Alkynyl” refers to linear and branched alkyne radicals. If no number of carbons is indicated for any alkenyl or alkynyl, then 2-12 carbons are contemplated. “Organic residue” refers to the radical of any organic moiety, which may optionally contain one or more heteroatoms, such as oxygen, nitrogen, silicon, phosphorus, and halogen, in addition to carbon and hydrogen. An organic residue may contain one or more aryl or non-aryl rings or both aryl and non-aryl rings. The term “hydrocarbyl” refers to a radical of any hydrocarbon, which may be aliphatic, cyclic, aromatic or a combination thereof, and which may optionally contain one or more heteroatoms, such as oxygen, nitrogen, silicon, phosphorus, and halogen, in addition to carbon and hydrogen. The hydrocarbyl moieties may contain aryl or non-aryl rings or both aryl and non-aryl rings, such as one or more alicyclic rings, or aromatic rings or both alicyclic and aromatic rings. When a hydrocarbyl moiety contains two or more alicyclic rings, such alicyclic rings may be isolated, fused or spirocyclic. Alicyclic hydrocarbyl moieties include single alicyclic rings, such as cyclopentyl and cyclohexyl, as well as bicyclic rings, such as dicyclopentadienyl, norbornyl, and norbornenyl. When the hydrocarbyl moiety contains two or more aromatic rings, such rings may be isolated or fused. By the term “curing” is meant any process, such as polymerization or condensation, that increases the molecular weight of a material or composition. “Curable” refers to any material capable of being cured under certain conditions. The term “oligomer” refers to dimers, trimers, tetramers and other relatively low molecular weight materials that are capable of further curing. The term “polymer” includes oligomers and refers to homopolymers, copolymers, terpolymers, tetrapolymers and the like. As used herein, the term “(meth)acrylate” refers to both acrylate and methacrylate. Likewise, the terms “(meth)acrylic acid”, “(meth)acrylonitrile” and “(meth)acrylamide” refer to acrylic acid and methacrylic acid, acrylonitrile and methacrylonitrile, and acrylamide and methacrylamide, respectively.

Compositions useful in the present invention comprise a condensed silicon-containing polymer (also referred to herein as a “condensed polymer”). The present condensed polymers, and films and underlayers formed therefrom, are wet strippable. As used herein, the term “condensed polymer” refers to (a) a condensate and/or hydrolyzate of (i) one or more polymers comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and (ii) one or more condensable silicon monomers, or alternatively, (b) a polymer having an organic polymer chain having pendently-bound siloxane moieties. As used herein, the term “condensate and/or hydrolyzate” refers to a condensation product, a hydrolysis product, a hydrolysis-condensation product, or a combination of any of the foregoing. The present condensed polymers comprise as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety pendent to the polymer backbone, where the monomers are both polymerized through the site of unsaturation and condensed through the silicon-containing moiety as well as through the condensable silicon monomer. The polymers of the invention may optionally, and preferably do, comprise one or more second unsaturated monomers. Preferably, the unsaturated monomers comprise one radical polymerizable double or triple bond, more preferably a radical polymerizable carbon-carbon double or triple bond, and even more preferably radical polymerizable carbon-carbon double bond. The present condensed polymers are preferably free of repeating units of a monomer having two or more radical polymerizable double bonds. Preferably, the present condensed polymers are free of fluoroalkyl substituents.

Any unsaturated monomer having a condensable silicon-containing moiety is suitable for use as the first unsaturated monomer to form the present condensed polymers. One or more first unsaturated monomers may be used. Ethylenically unsaturated monomers having a condensable silicon-containing moiety are preferred. Preferred unsaturated monomers are those having a condensable silicon-containing moiety of the formula (1) *-L-SiR¹ _(b)Y¹ _(3-b)  (1) wherein L is a single bond or a divalent linking group; each R¹ is independently chosen from H, C₁₋₁₀-alkyl, C₂₋₂₀-alkenyl, C₅₋₂₀-aryl, and C₆₋₂₀-aralkyl; each Y¹ is independently chosen from halogen, C₁₋₁₀-alkoxy, C₅₋₁₀-aryloxy, and C₁₋₁₀-carboxy; b is an integer from 0 to 2; and * denotes the point of attachment to the monomer. It is preferred that L is a divalent linking group. It is further preferred that the divalent linking group comprises one or more heteroatoms chosen from oxygen and silicon. A suitable divalent linking group is an organic radical having from 1 to 20 carbon atoms and optionally one or more heteroatoms. Preferred divalent linking groups have the formula —C(═O)—O-L¹- wherein L¹ is a single bond or an organic radical having from 1 to 20 carbon atoms. Preferably, each R¹ is independently chosen from C₁₋₁₀-alkyl, C₂₋₂₀-alkenyl, C₅₋₂₀-aryl, and C₆₋₂₀-aralkyl. It is preferred that each Y¹ is independently chosen from halogen, C₁₋₆-alkoxy, C₅₋₁₀-aryloxy, C₁₋₆-carboxy, and more preferably from halogen, C₁₋₆-alkoxy, and C₁₋₆-carboxy. Preferably, b is 0 or 1, and more preferably b=0.

It is preferred that at least one first unsaturated monomer has the formula (2)

wherein L is a single covalent bond or a divalent linking group; each R¹ is independently chosen from H, C₁₋₁₀-alkyl, C₂₋₂₀-alkenyl, C₅₋₂₀-aryl, and C₆₋₂₀-aralkyl; each of R² and R³ are independently chosen from H, C₁₋₄-alkyl, C₁₋₄-haloalkyl, halo, C₅₋₂₀-aryl, C₆₋₂₀-aralkyl, and CN; R⁴ is chosen from H, C₁₋₁₀-alkyl, C₁₋₁₀-haloalkyl, halo, C₅₋₂₀-aryl, C₆₋₂₀-aralkyl, and C(═O)R⁵; R⁵ is chosen from OR⁶ and N(R⁷)₂; R⁶ is chosen from H, C₁₋₂₀ alkyl, C₅₋₂₀-aryl, and C₆₋₂₀-aralkyl; each R⁷ is independently chosen from H, C₁₋₂₀-alkyl, and C₅₋₂₀-aryl; each Y¹ is independently chosen from halogen, C₁₋₁₀-alkoxy, C₅₋₁₀-aryloxy, and C₁₋₁₀-carboxy; and b is an integer from 0 to 2. It is preferred that L is a divalent linking group. It is further preferred that the divalent linking group comprises one or more heteroatoms chosen from oxygen and silicon. A suitable divalent linking group is an organic radical having from 1 to 20 carbon atoms and optionally one or more heteroatoms. Preferred divalent linking groups have the formula —C(═O)—O-L¹- wherein L¹ is a single covalent bond or an organic radical having from 1 to 20 carbon atoms. Preferably, each R¹ is independently chosen from C₁₋₁₀-alkyl, C₂₋₂₀-alkenyl, C₅₋₂₀-aryl, and C₆₋₂₀-aralkyl. It is preferred that each Y¹ is independently chosen from halogen, C₁₋₆-alkoxy, C₅₋₁₀-aryloxy, and C₁₋₆-carboxy, and more preferably from halogen, C₁₋₆-alkoxy, and C₁₋₆-carboxy. Preferably, b is 0 or 1, and more preferably b=0. It is preferred that each R² and R³ are independently chosen from H, C₁₋₄-alkyl, C₁₋₄-haloalkyl, C₅₋₂₀-aryl, and C₆₋₂₀-aralkyl, and more preferably from H, C₁₋₄-alkyl, C₅₋₂₀-aryl, and C₆₋₂₀-aralkyl. Yet more preferably, each R² and R³ are independently chosen from H, methyl, ethyl, propyl, butyl, phenyl, naphthyl, benzyl, and phenethyl. R⁴ is preferably chosen from H, C₁₋₁₀-alkyl, C₁₋₁₀-haloalkyl, C₅₋₂₀-aryl, C₆₋₂₀-aralkyl, and C(═O)R⁵, and more preferably from H, C₁₋₁₀-alkyl, C₅₋₂₀-aryl, C₆₋₂₀-aralkyl, and C(═O)R⁵. It is preferred that R⁵ is OR⁶. R⁶ is preferably chosen from H, C₁₋₁₀-alkyl, C₅₋₁₀-aryl, and C₆₋₁₅-aralkyl. Preferably, each R⁷ is independently chosen from H, C₁₋₁₀-alkyl, and C₆₋₂₀-aryl.

Suitable first unsaturated monomers having a condensable silicon-containing moiety are generally commercially available from a variety of sources, such as Sigma-Aldrich (St. Louis, Mo.), or may be prepared by methods known in the art. Such monomers may be used as-is, or may be further purified. Exemplary first unsaturated monomers include, but are not limited to: allyl dimethoxysilane; allyl dichlorosilane; (trimethoxysilyl)methyl (meth)acrylate; (trimethoxysilyl)ethyl (meth)acrylate; (trimethoxysilyl)propyl (meth)acrylate; (trimethoxysilyl)butyl (meth)acrylate; (triethoxysilyl)methyl (meth)acrylate; (triethoxysilyl)ethyl (meth)acrylate; (triethoxysilyl)propyl (meth)acrylate; (triethoxysilyl)butyl (meth)acrylate; (trichlorosilyl)methyl (meth)acrylate; (trichlorosilyl)ethyl (meth)acrylate; (trichlorosilyl)propyl (meth)acrylate; (trichlorosilysilyl)butyl (meth)acrylate; (methyldimethoxysilyl)propyl (meth)acrylate; vinyltriacetoxy silane; (triacetoxysilyl)propyl (meth)acrylate; 4-((trimethoxysilyl)propyl) styrene; 4-(trimethoxysilyl) styrene; and vinyltrimethoxysilane.

The condensed polymers of the invention may further comprise one or more second unsaturated monomers, where such second monomers are free of a condensable silicon-containing moiety. Preferably, the condensed polymers further comprise as polymerized units one or more second unsaturated monomers of formula (3)

wherein Z is chosen from organic residue having from 1 to 30 carbon atoms and an acidic proton having a pKa in water from −5 to 13, C₅₋₃₀-aryl moiety, substituted C₅₋₃₀-aryl moiety, CN, and —C(═O)R¹³; R¹⁰ is chosen from H, C₁₋₁₀-alkyl, C₁₋₁₀-haloalkyl, halo, and —C(═O)R¹⁴; each of R¹¹ and R¹² are independently chosen from H, C₁₋₄-alkyl, C₁₋₄-haloalkyl, halo, and CN; each of R¹³ and R¹⁴ is independently chosen from OR¹⁵ and N(R¹⁶)₂; R¹⁵ is chosen from H, C₁₋₂₀-alkyl, C₅₋₃₀-aryl, C₆₋₂₀-aralkyl and a monovalent organic residue having a lactone moiety; and each R¹⁶ is independently chosen from H, C₁₋₂₀-alkyl, and C₆₋₂₀-aryl; wherein Z and R¹⁰ may be taken together to form a 5 to 7-membered unsaturated ring. As used herein, the term “aryl” refers to aromatic carbocycles and aromatic heterocycles. It is preferred that aryl moieties are aromatic carbocycles. “Substituted aryl” refers to any aryl (or aromatic) moiety having one or more of its hydrogens replaced with one or more substituents chosen from halogen, C₁₋₆-alkyl, C₁₋₆-haloalkyl, C₁₋₆-alkoxy, C₁₋₆-haloalkoxy, phenyl, and phenoxy, preferably from halogen, C₁₋₆-alkyl, C₁₋₆-alkoxy, phenyl, and phenoxy, and more preferably from halogen, C₁₋₆-alkyl, and phenyl. Preferably, a substituted aryl has from 1 to 3 substituents, and more preferably 1 or 2 substituents. Exemplary ethylenically unsaturated monomers include, without limitation: vinyl aromatic monomers such as styrene, α-methylstyrene, β-methylstyrene, stilbene, vinylnaphthylene, acenaphthalene, and vinylpyridine; hydroxy-substituted vinyl aromatic monomers such as hydroxy styrene, o-courmaric acid, m-courmaric acid, p-courmaric acid, and hydroxyvinylnaphthylene; carboxyl-substituted vinyl aromatic monomers such as vinyl benzoic acid; ethylenically unsaturated carboxylic acids such as cinnamic acid, maleic acid, fumaric acid, crotonic acid, citraconic acid, itaconic acid, 3-pyridine (meth)acrylic acid, 2-phenyl (meth)acrylic acid, (meth)acrylic acid, 2-methylenemalonic acid, cyclopentenecarboxylic acid, methylcyclopentenecarboxylic acid, cyclohexenecarboxylic acid, and 3-hexene-1,6-dicarboxylic acid; hydroxyaryl esters of ethylenically unsaturated carboxylic acids, such as hydroxyphenyl (meth)acrylate, hydroxybenzyl (meth)acrylate, hydroxynaphthyl (meth)acrylate, and hydroxyanthracenyl (meth)acrylate; ethylenically unsaturated anhydride monomers such as maleic anhydride, citraconic anhydride and itaconic anhydride, ethylenically unsaturated imide monomers such as maleimide; ethylenically unsaturated carboxylic acid esters such as crotonic acid esters, itaconic acid esters, and (meth)acrylate esters; (meth)acrylonitrile; (meth)acrylamides; and the like. Suitable (meth)acrylate ester monomers include, but are not limited to, C₇₋₁₀-aralkyl (meth)acrylates, C₁₋₁₀-hydroxyalkyl (meth)acrylates, glycidyl (meth)acrylate, C₁₋₁₀-mercaptoalkyl (meth)acrylates, and C₁₋₁₀-alkyl (meth)acrylates. Exemplary (meth)acrylate ester monomers include, without limitation, benzyl acrylate, benzyl methacrylate, hydroxyethyl acrylate, hydroxyethyl methacrylate, hydroxypropyl acrylate, hydroxypropyl methacrylate, mercaptopropyl methacrylate, glycidyl methacrylate, methyl acrylate, and methyl methacrylate.

Preferred second unsaturated monomers are those of formula (4)

wherein ADG is an acid decomposable group; and R²⁰ is chosen from H, C₁₋₄-alkyl, C₁₋₄-haloalkyl, halo, and CN. R²⁰ is preferably chosen from H, C₁₋₄-alkyl, C₁₋₄-fluoroalkyl, fluoro, and CN, more preferably from H, C₁₋₄-alkyl, trifluoromethyl, fluoro, and CN, even more preferably from H, methyl, trifluoromethyl, fluoro, and CN, and most preferably R²⁰ is H or methyl. In formula (4), ADG is an acid decomposable group having from 2 to 30 carbon atoms. The term “acid decomposable group”, as used herein, refers to any functional group capable of being decomposed by acid to form a different functional group having increased aqueous base solubility as compared to the acid decomposable group. Suitable acid decomposable groups include, but are not limited to, —O—C₄₋₃₀-hydrocarbyl moiety where the C₄₋₃₀-hydrocarbyl moiety is bonded to the oxygen atom through a tertiary carbon atom, a C₂₋₃₀-hydrocarbyl moiety having an anhydride moiety, a C₂₋₃₀-hydrocarbyl moiety having an imide moiety, and a C₄₋₃₀-organic residue comprising an acetal functional group. Preferred acid decomposable groups are —O—C₄₋₃₀-hydrocarbyl moiety where the C₄₋₃₀-hydrocarbyl moiety is bonded to the oxygen atom through a tertiary carbon atom, and a C₄₋₃₀-organic residue comprising an acetal functional group, and more preferably —O—C₄₋₃₀-hydrocarbyl moiety where the C₄₋₂₀-hydrocarbyl moiety is bonded to the oxygen atom through a tertiary carbon atom, and a C₄₋₂₀-organic residue comprising an acetal functional group. As used herein, the term “acetal” also embraces “ketal”, “hemiacetal”, and “hemiketal.” Exemplary acid decomposable groups include, without limitation, —NR²¹R²², —OR²³ and —O—C(═O)—R²⁴, wherein R²¹ and R²² are each independently chosen from H, C₁₋₂₀ alkyl, and C₅₋₁₀-aryl; R²³ is a C₄₋₃₀-organic residue bound to the oxygen through a tertiary carbon (that is, a carbon that is bound to three other carbons) or a C₄₋₃₀-organic residue comprising an acetal functional group; and R²⁴ is chosen from H, C₁₋₃₀-alkyl, and C₅₋₃₀-aryl. Preferably, R²³ has from 4 to 20 carbon atoms. It is further preferred that R²³ is a branched or cyclic moiety. When R²³ contains a cyclic moiety, such cyclic moiety typically has from 4 to 8 atoms in the ring, and preferably 5 or 6 atoms in the ring. R²³ may optionally contain one or more heteroatoms such as oxygen. Preferably, R²³ is a branched aliphatic or a cycloaliphatic moiety optionally containing one or more heteroatoms.

Preferred compounds of formula (4) are those of formula (4a)

wherein R²³ is chosen from a C₄₋₂₀-organic residue bound to the oxygen through a tertiary carbon or a C₄₋₂₀-organic residue comprising an acetal functional group; and R²⁰ is chosen from H, C₁₋₄-alkyl, C₁₋₄-haloalkyl, halo, and CN. More preferably, R²³ has the structure shown in formula (5a) or (5b)

wherein each of R²⁴, R²⁵ and R²⁶ is independently an organic residue having from 1 to 6 carbon atoms; R²⁴ and R²⁵ may be taken together to form a 4 to 8 membered ring; L² is a divalent linking group or a single covalent bond; A represents an acetal functional group; and * indicates the point of attachment to the ester oxygen. It is preferred that each of R²⁴, R²⁵ and R²⁶ is independently chosen from C₁₋₆-alkyl. When R²⁴ and R²⁵ are taken together to form a 4 to 8 membered ring, it is preferred that such ring is cycloaliphatic. Such ring may be a single ring or may be bicyclic, and may optionally contain one or more heteroatoms chosen from oxygen, sulfur and nitrogen, preferably oxygen and sulfur and more preferably oxygen. Preferably, R²⁴ and R²⁵ may be taken together to form a 5 to 8 membered ring. Suitable 4 to 8 membered rings include, but are not limited to, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, norbornyl, and oxabicylco[2.2.1]heptyl, preferably cyclopentyl, cyclohexyl, norbornyl, and oxabicylco[2.2.1]heptyl, and more preferably cyclopentyl and cyclohexyl. Suitable divalent linking groups include C₁₋₁₀-alkylene, and preferably C₁₋₅-alkylene. Preferably, the acetal functional group is a 5 or 6-membered ring cyclic ketal, and more preferably a cyclic ketal formed from acetone. Exemplary moieties for R²³ include, without limitation: tert-butyl; 2,3-dimethyl-2-butyl; 2,3,3-trimethyl-2-butyl; 2-methyl-2-butyl; 2-methyl-2-pentyl; 3-methyl-3-pentyl; 2,3,4-trimethyl-3-pentyl; 2,2,3,4,4-pentamethyl-3-pentyl; 1-methyl-1-cyclopentyl; 1-ethyl-1-cyclopentyl; 1,2-dimethyl-1-cyclopentyl; 1,2,5-trimethyl-1-cyclopentyl; 1,2,2-trimethyl-cyclopentyl; 1,2,2,5-tetramethyl-1-cyclopentyl; 1,2,2,5,5-pentamethyl-1-cyclopentyl; 1-methyl-1-cyclohexyl; 1-ethyl-1-cyclohexyl; 1,2-dimethyl-1-cyclohexyl; 1,2,6-trimethyl-1-cyclohexyl; 1,2,2,6-tetramethyl-1-cyclohexyl; 1,2,2,6,6-pentamethyl-1-cyclohexyl; 2,4,6-trimethyl-4-heptyl; 3-methyl-3-norbornyl; 3-ethyl-3-norbornyl; 6-methyl-2-oxabicylco[2.2.1]hept-6-yl; and 2-methyl-7-oxabicylco[2.2.1]hept-2-yl. Preferably, R⁵ is chosen from tert-butyl; 2,3-dimethyl-2-butyl; 2,3,3-trimethyl-2-butyl; 2-methyl-2-butyl; 2-methyl-2-pentyl; 3-methyl-3-pentyl; 2,3,4-trimethyl-3-pentyl; 2,2,3,4,4-pentamethyl-3-pentyl; 1-methyl-1-cyclopentyl; 1-ethyl-1-cyclopentyl; 1,2-dimethyl-1-cyclopentyl; 1,2,5-trimethyl-1-cyclopentyl; 1,2,2-trimethyl-cyclopentyl; 1,2,2,5-tetramethyl-1-cyclopentyl; 1,2,2,5,5-pentamethyl-1-cyclopentyl; 1-methyl-1-cyclohexyl; 1-ethyl-1-cyclohexyl; 1,2-dimethyl-1-cyclohexyl; 1,2,6-trimethyl-1-cyclohexyl; 1,2,2,6-tetramethyl-1-cyclohexyl; 1,2,2,6,6-pentamethyl-1-cyclohexyl; and 2,4,6-trimethyl-4-heptyl. L2 is preferably a divalent linking group. Suitable divalent linking groups for L² have are organic residues having from 1 to 20 atoms, and more preferably from 1 to 20 carbon atoms. Optionally, the divalent linking groups of L2 may contain one or more heteroatoms, such as oxygen, nitrogen or a combination thereof. Suitable monomers of formulae (3), (4) and (4a) may be available commercially or made by a variety of methods known in the art, such as is disclosed in U.S. Pat. Nos. 6,136,501; 6,379,861; and 6,855,475.

Other preferred monomers of formula (4) are those of formula (6)

wherein R²⁰ is independently chosen from H, C₁₋₄-alkyl, C₁₋₄-haloalkyl, halo, and CN; and R³⁰ is a monovalent organic residue having a lactone moiety. In formula (6), R³⁰ is a C₄₋₂₀-monovalent organic residue comprising a lactone moiety. R³⁰ may comprise any suitable lactone moiety, and preferably comprises a 5 to 7-membered lactone, which may be optionally substituted. Suitable substituents on the lactone ring are C₁₋₁₀-alkyl moieties. Suitable lactone moieties for R³⁰ are those having formula (7)

wherein E is a 5 to 7-membered ring lactone; each R³¹ is independently chosen from C₁₋₁₀-alkyl; p is an integer from 0 to 3; Y is a single covalent bond or a divalent linking residue having from 1 to 10 carbon atoms; and * indicates the point of attachment to the oxygen atom of the ester. It is preferred that each R³¹ is independently chosen from C₁₋₆-alkyl, and more preferably C₁₋₄-alkyl. Examples of R³¹ are methyl, ethyl, n-propyl, iso-propyl, n-butyl, sec-butyl, and iso-butyl. Preferably, p=0 or 1. Suitable divalent linking residues for Y include, but are not limited to, divalent organic residues having from 1 to 20 carbon atoms. Suitable divalent organic residues for Y include, without limitation, C₁₋₂₀-hydrocarbyl moieties, C₁₋₂₀-heteroatom-containing hydrocarbyl moieties, and substituted C₁₋₂₀-hydrocarbyl moieties. The term “C₁₋₂₀-heteroatom-containing hydrocarbyl moieties” refers to hydrocarbyl moieties having one or more heteroatoms, such as nitrogen, oxygen, sulfur, phosphorus, within the hydrocarbyl chain. Exemplary heteroatoms include, but are not limited to, —O—, —S—, —N(H)—, —N(C₁₋₂₀-hydrocarbyl)-, —C(═O)—O—, —S(═O)—, —S(═O)₂—, —C(═O)—NH—, and the like. “Substituted C₁₋₂₀-hydrocarbyl moieties” refers to any hydrocarbyl moiety having one or more hydrogens replaced with one or more substituents such as halogen, cyano, hydroxy, amino, mercapto, and the like. It is preferred that R³⁰ is chosen from gamma-butyrolactone (GBLO), beta-butyrolactone, gamma-valerolactone, delta-valerolactone, and caprolactone, and more preferably, R³⁰ is GBLO. Monomers of formula (6) are generally commercially available or may be prepared by methods known in the art.

In one preferred embodiment, the present condensed polymer comprises as polymerized units, one or more unsaturated monomers comprising a chromophore. Suitable chromophores are any aromatic (or aryl) moiety that absorbs radiation at the wavelength of interest. Such chromophores are unsubstituted aromatic moieties, such as phenyl, benzyl, naphthyl, anthracenyl, and the like, or may be substituted with one or more of hydroxyl, C₁₋₁₀-alkyl, C₂₋₁₀-alkenyl, C₂₋₁₀-alkynyl, and C₅₋₃₀-aryl, and preferably is unsubstituted or hydroxyl-substituted. Preferably, the condensed polymer comprises as polymerized units, one or more unsaturated monomers of formula (3) having a chromophore moiety. Preferred chromophore moieties are chosen from pyridyl, phenyl, naphthyl, acenaphthyl, fluorenyl, carbazolyl, anthracenyl, phenanthryl, pyrenyl, coronenyl, tetracenyl, pentacenyl, tetraphenyl, benzotetracenyl, triphenylenyl, perylenyl, benzyl, phenethyl, tolyl, xylyl, styrenyl, vinylnaphthyl, vinylanthracenyl, dibenzothiophenyl, thioxanthonyl, indolyl, acridinyl, and the like, and more preferably phenyl, naphthyl, anthracenyl, phenanthryl, benzyl, and the like. Chromophores used in the present invention are free aromatic rings having a substituent of the structure *—C(Rx)₂-O-Lg, each Rx is independently H or a alkyl group of 1 to 15 carbons, where each Rx may be taken together form an aliphatic ring; Lg is H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group, and * indicates the point of attachment to the aromatic ring. That is, the chromophores do not have an aromatic ring having a substituent where an sp3 hybridized carbon is bonded directly to the aromatic ring and to an oxy group.

It is preferred that the present condensed polymers comprise as polymerized units one or more monomers of formula (2) and one or more monomers of formula (3), preferably one or more monomers of formula (2) and two or more monomers of formula (3), even more preferably one or more monomers of formula (2) and one or more monomers of formula (6), and still more preferably one or more monomers of formula (2), one or more monomers of formula (6), and one or more monomers of formula (3) having a chromophore moiety. When the present condensed polymer comprises as polymerized units one or more monomers of formula (2) and one or more monomers of formula (3), such monomers are present in a mole ratio of 1:99 to 99:1 of total monomers of formula (2) to total monomers of formula (3). Preferably, the mole ratio of the total monomers of formula (2) to the total monomers of formula (3) is from 95:5 to 5:95, more preferably from 90:10 to 10:90, and yet more preferably from 50:50 to 5:95. The one or more optional ethylenically unsaturated third monomers may be used in an amount from 0 to three times the molar amount of the total monomers of formulae (1) and (2). The mole ratio of the total optional third monomers to the total monomers of formula (1) and (2) is from 0:100 to 75:25, preferably from 10:90 to 75:25, and more preferably from 25:70 to 75:25. When the present condensed polymers comprise as polymerized units a relatively higher percentage of monomers containing a chromophore, such polymers show reduced ability to be removed by wet stripping. It is preferred that the present condensed polymers comprise as polymerized units from 0 to 50 mol % of monomers containing a chromophore. It is further preferred that present condensed polymers are free of pendent aromatic rings having a substituent of the formula

where each Rx is independently H or a alkyl group of 1 to 15 carbons, where each Rx may be taken together form an aliphatic ring; Lg is H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group; a1=0 or 1; and * indicates the point of attachment to the aromatic ring.

Any condensable silicon monomer may be used to form the present condensed polymers, provided that the condensable silicon monomer is different from the first unsaturated monomer having a condensable silicon moiety, and that the condensable silicon monomer condenses with the condensable silicon moiety pendent from the polymer backbone. As used herein, the term “backbone” refers to the main polymer chain. As used herein, “condensable silicon monomer” refers to a silicon monomer having one or more condensable or hydrolyzable moieties. As used herein, “condensable moiety” or “hydrolyzable moiety” refers to any moiety capable to being condensed or hydrolyzed under conditions used to form the present condensed polymers. Exemplary condensable or hydrolyzable moieties include, but are not limited to, halogens, alkoxy, carboxylate, hydroxy, enoxy, oximino, amino, and the like. Suitable condensable silicon monomers are those of formula (8) Si(R⁵⁰)_(p)(X)_(4-p)  (8) wherein p is an integer from 0 to 3; each R⁵⁰ is independently chosen from a C₁₋₃₀ hydrocarbyl moiety and a substituted C₁₋₃₀ hydrocarbyl moiety; and each X is independently chosen from halo, C₁₋₁₀ alkoxy, —OH, —O—C(O)—R⁵⁰, and —(O—Si(R⁵¹)₂)_(p2)—X¹; X¹ is independently chosen from halo, C₁₋₁₀ alkoxy, —OH, —O—C(O)—R⁵⁰; each R⁵¹ is independently chosen from R⁵⁰ and X; and p2 is an integer from 1 to 10. Preferably, p is an integer from 0 to 2, more preferably 0 to 1, and yet more preferably p=0. X is preferably chosen from C₁₋₁₀ alkoxy, —OH, —O—C(O)—R⁵⁰, and —(O—Si(R⁵¹)₂)_(p2)—X¹, and more preferably from C₁₋₁₀ alkoxy and OH. X¹ is preferably chosen from C₁₋₁₀ alkoxy and —OH. The substituted C₁₋₃₀ hydrocarbyl moiety of R⁵⁰ refers to any C₁₋₃₀ hydrocarbyl moiety having one or more of its hydrogens replaced with one or more substituted moieties chosen from hydroxy, mercapto, C₁₋₂₀ alkoxy, amino, C₁₋₂₀ alkylamino, di-C₁₋₂₀ alkylamino, cyano, halogen, epoxide, —C(═O)O—R¹⁷, —C(═O)—N(R¹⁷)₂, and —C(═O)—O—C(═O)—R¹⁷, wherein each R¹⁷ is chosen from H and C₁₋₂₀ alkyl. Suitable C₁₋₃₀ hydrocarbyl moieties of R⁵⁰ include, without limitation, C₁₋₃₀ alkyl, C₂₋₃₀ alkenyl, C₂₋₃₀ alkynyl, C₃₋₃₀ cycloalkyl, and C₆₋₃₀ aryl, and preferably are C₁₋₂₀ alkyl, C₂₋₂₀ alkenyl, C₂₋₂₀ alkynyl, C₃₋₂₀ cycloalkyl, and C₆₋₂₅ aryl. Silicon monomers are often referred to by the number of hydrolyzable moieties bonded to silicon in the monomer. For example, “M monomer” refers to a silicon monomer having one hydrolyzable moiety, such as monomers of formula (R⁵⁰)₃SiX, “D monomer” refers to a silicon monomer having two hydrolyzable moieties such as monomers of the formula (R⁵⁰)₂SiX₂, “T monomer” refers to a silicon monomer having three hydrolyzable moieties such as monomers of the formula R⁵⁰SiX₃, and “Q monomer” refers to a to a silicon monomer having four hydrolyzable moieties such as monomers of the formula SiX₄, wherein X and R⁵⁰ in each monomer are as described above. Any of M, D, T and Q monomers may be used individually or a mixture of any of the foregoing may be used to prepare the present condensed polymers. Preferably, the condensable silicon monomer is one or more monomers chosen from formulas (8a), (8b), (8c), and (8d) R⁵⁰ ₃SiX  (8a) R⁵⁰ ₂SiX₂  (8b) R⁵⁰SiX₃  (8c) SiX₄  (8d) wherein each X and R⁵⁰ are as described above for formula (8). It is preferred that one or more Q monomers, that is, monomers of formula (8d), are used to prepare the present condensed polymers. Such condensable silicon monomers are generally commercially available and may be used as is or may be further purified.

Condensable silicon monomers useful in forming the present condensed polymers include, without limitation, methyltrichlorosilane, methyltrimethoxysilane, methyltriethoxysilane, methyltriacetoxy silane, ethyltrichlorosilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltriacetoxysilane, propyltrichlorosilane, propyltrimethoxy silane, propyltriethoxysilane, propyltriacetoxysilane, hydroxypropyltrichlorosilane, hydroxypropyltrimethoxysilane, hydroxypropyltriethoxysilane, hydroxypropyltriacetoxysilane, mercaptopropyltrichlorosilane, mercaptopropyltrimethoxysilane, mercaptopropyltriethoxysilane, mercaptopropyltriacetoxy-silane, cyclopentyltrichlorosilane, cyclopentyltrimethoxysilane, cyclopentyltriethoxysilane, cyclopentyltriacetoxysilane, vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltriacetoxy silane, phenyltrichlorosilane, phenyltrimethoxysilane, phenyltriethoxysilane, phenyltriacetoxysilane, biphenyltrichlorosilane, biphenyltrimethoxysilane, biphenyltriethoxysilane, biphenyltriacetoxysilane, dimethyldichlorosilane, dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyldiacetoxysilane, diethyldichlorosilane, diethyldimethoxysilane, diethyldiethoxysilane, diethyldiacetoxysilane, diphenyldichlorosilane, diphenyldimethyoxy-silane, diphenyldiethoxysilane, diphenyldiacetoxysilane, methylphenyldichlorosilane, methylphenyldimethoxysilane, methylphenyldiethoxysilane, methylphenyldiacetoxysilane, methylvinyldichlorosilane, methylvinyldimethoxysilane, methylvinyldiethoxysilane, methylvinyldiacetoxysilane, divinyldichlososilane, divinyldimethoxysilane, divinyldiethoxysilane, divinyldiacetoxysilane, tetrachlorosilane, tetramethoxysilane, tetraethoxysilane, and tetraacetoxysilane. Preferred curable silicon monomers are tetramethoxysilane and tetraethoxysilane.

Optionally, one or more etch selectivity improving agents may also be condensed with the one or more condensable silane monomers and the one or more polymers described above. Suitable etch selectivity improving agents are those of formula (9) G(X¹)_(m4)  (9) wherein, G is an element from Groups 13 to 15 of the periodic table excluding carbon and silicon; each X¹ is independently chosen from halo, and OR⁵²; each R⁵² is independently H or an organic group having 1 to 30 carbon atoms; and m4 is the valence of G. Preferably, R⁵² is chosen from H, C₁₋₁₀-alkyl, —C(O)—C₁₋₁₀-alkyl, and C₆₋₁₀-aryl, and more preferably from H, C₁₋₁₀-alkyl, and —C(O)—C₁₋₁₀-alkyl. G is preferably an element chosen from boron, aluminum, gallium, yttrium, germanium, titanium, zirconium, hafnium, bismuth, tin, phosphorous, vanadium, arsenic, antimony, niobium, and tantalum, more preferably from boron, aluminum, and germanium, and even more preferably G is boron. Suitable compounds of formula (9) include, but are not limited to: boron methoxide, boron ethoxide, boron propoxide, boron butoxide, boron amyloxide, boron hexyloxide, boron cyclopentoxide, boron cyclohexloxide, boron allyloxide, boron phenoxide, boron methoxyethoxide, boric acid, boron oxide; aluminum methoxide, aluminum ethoxide, aluminum propoxide, aluminum butoxide, aluminum amyloxide, aluminum hexyloxide, aluminum cyclopentoxide, aluminum cyclohexyloxide, aluminum allyloxide, aluminum phenoxide, aluminum methoxyethoxide, aluminum ethoxyethoxide, aluminum dipropoxyethyl-acetoacetate, aluminum dibutoxyethyl-acetoacetate, aluminum propoxy-bis-ethyl-acetoacetate, aluminum butoxy-bis-ethyl-acetoacetate, aluminum 2,4-pentanedionate, aluminum 2,2,6,6-tetramethyl-3,5-heptanedionate, germanium methoxide, germanium ethoxide, germanium propoxide, germanium butoxide, germanium amyloxide, germanium hexyloxide, germanium cyclopentoxide, germanium cyclohexyloxide, germanium allyloxide, germanium phenoxide, germanium methoxyethoxide, and germanium ethoxyethoxide. Suitable etch selectivity improving agents are those disclosed in U.S. Pat. No. 8,951,917.

Condensed polymers of the invention may be prepared by first polymerizing the one or more first unsaturated monomers and any optional second unsaturated monomers according to methods well-known in the art to form an uncondensed polymer. Preferably, the present monomers are polymerized by free-radical polymerization, such as those procedures used for preparing (meth)acrylate or styrenic polymers. Any of a wide variety of free-radical initiators and conditions my be used. Other suitable polymerization methods of preparing the polymers include, without limitation, Diels-Alder, living anionic, condensation, cross-coupling, RAFT, ATRP, and the like. Next, one or more uncondensed polymers are subjected to conditions to condense and/or hydrolyze the condensable silicon-containing moiety to form the present condensed polymers. Such condensation and/or hydrolysis conditions are well-known in the art and typically involve contacting the one or more uncondensed polymers with aqueous acid or aqueous base, and preferably aqueous acid. For example, one or more of the present uncondensed polymers may be contacted with a composition comprising water, an acid, and optionally one or more organic solvents, with optional heating. Preferred acids are mineral acids, such as HCl. The condensed polymers of the invention may be partially condensed or fully condensed. By “partially condensed” it is meant that a portion of the condensable silicon-containing moieties present in the polymer have undergone a condensation or hydrolysis reaction. By “fully condensed” is meant that all condensable silicon-containing moieties present in the polymer have undergone a condensation or hydrolysis reaction. The present polymers typically have a M_(w) of 1000 to 10000 Da, preferably from 2000 to 8000 Da, and more preferably from 2500 to 6000 Da. It will be appreciated by those skilled in the art that mixtures of condensed polymers may suitably be used in the present process.

Compositions of the present invention comprise: (1) one or more condensates and/or hydrolyzates of (i) one or more polymers comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and (ii) one or more condensable silicon monomers, and (2) one or more solvents. Alternatively, compositions of the present invention comprise (a) one or more solvents; and (b) one or more condensed polymers having an organic polymer chain having pendently-bound siloxane moieties.

Preferred compositions comprise: (1) one or more condensates and/or hydrolyzates of one or more polymers comprising as polymerized units (i) one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and (ii) one or more second unsaturated monomers free of a condensable silicon-containing moiety, wherein at least one second unsaturated monomer comprises a pendent moiety chosen from an acid decomposable group, a monovalent organic residue having a lactone moiety, or a combination thereof; (iii) one or more condensable silicon monomers; and (2) one or more solvents. Preferably, the one or more condensates and/or hydrolyzates further comprise as polymerized units at least one additional unsaturated monomer of the formula (4)

wherein ADG is an acid decomposable group; and R²⁰ is chosen from H, C₁₋₄-alkyl, C₁₋₄-haloalkyl, halo, and CN. When the compositions of the invention are used as underlayers, it is preferred that one or more of the condensed polymers comprise one or more chromophore moieties, and more preferably that at least one chromophore moiety is pendent from the polymer backbone. Suitable chromophores are aryl moieties, substituted aryl moieties, aralkyl moieties or aralkenyl moieties, such as C₆₋₂₀ aryl, substituted C₆₋₂₀ aryl, C₆₋₂₀ aralkyl, and C₈₋₃₀ aralkenyl. The choice of such chromophore depends upon the antireflective properties desired and is within the ability of those skilled in the art. In another preferred embodiment, the one or more condensates and/or hydrolyzates further comprise at least one additional unsaturated monomer comprising a chromophore moiety chosen from pyridyl, phenyl, naphthyl, acenaphthyl, fluorenyl, carbazolyl, anthracenyl, phenanthryl, pyrenyl, coronenyl, tetracenyl, pentacenyl, tetraphenyl, benzotetracenyl, triphenylenyl, perylenyl, benzyl, phenethyl, tolyl, xylyl, styrenyl, vinylnaphthyl, vinylanthracenyl, dibenzothiophenyl, thioxanthonyl, indolyl, and acridinyl. In a preferred alternate embodiment, at least one condensable silicon monomer comprises a chromophore moiety chosen from pyridyl, phenyl, naphthyl, acenaphthyl, fluorenyl, carbazolyl, anthracenyl, phenanthryl, pyrenyl, coronenyl, tetracenyl, pentacenyl, tetraphenyl, benzotetracenyl, triphenylenyl, perylenyl, benzyl, phenethyl, tolyl, xylyl, styrenyl, vinylnaphthyl, vinylanthracenyl, dibenzothiophenyl, thioxanthonyl, indolyl, and acridinyl.

A variety of organic solvents and water may be used in the present compositions, provided that such solvent dissolves the components of the composition. Preferably, the present compositions comprise one or more organic solvents and optionally water. Organic solvents may be used alone or a mixture of organic solvents may be used. Suitable organic solvents include, but are not limited to; ketones such as cyclohexanone and methyl-2-n-amylketone; alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, and 1-ethoxy-2-propanol; ethers such as propylene glycol methyl ether (PGME), propylene glycol ethyl ether (PGEE), ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether; esters such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, ethyl lactate (EL), methyl hydroxyisobutyrate (HBM), ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate, tert-butyl propionate, and propylene glycol mono-tert-butyl ether acetate; lactones such as gamma-butyrolactone; and any combination of the foregoing. Preferred solvents are PGME, PGEE, PGMEA, EL, HBM, and combinations thereof.

The present compositions may comprise one or more optional components, such as cure catalysts, coating enhancers, one or more stabilizers, and the like. The amount of such optional components used in the present compositions is well within the ability of those skilled in the art.

Suitable cure catalysts include, but are not limited to, thermal acid generators, photoacid generators, and quaternary ammonium salts, preferably thermal acid generators and quaternary ammonium salts, and more preferably quaternary ammonium salts. A thermal acid generator is any compound which liberates acid upon exposure to heat. Thermal acid generators are well-known in the art and are generally commercially available, such as from King Industries, Norwalk, Conn. Exemplary thermal acid generators include, without limitation, amine blocked strong acids, such as amine blocked sulfonic acids like amine blocked dodecylbenzenesulfonic acid. A wide variety of photoacid generators are known in the art and are also generally commercially available, such as from Wako Pure Chemical Industries, Ltd., and from BASF SE. Suitable quaternary ammonium salts are: quaternary ammonium halides; quaternary ammonium carboxylates; quaternary ammonium sulfonates; quaternary ammonium bisulfates; and the like. Preferred quaternary ammonium salts include; benzyltrialkylammonium halides such as benzyltrimethylammonium chloride and benzyltriethylammonium chloride; tetraalkylammonium halides such as tetramethylammonium halides, tetraethylammonium halides, and tetrabutylammonium halides; tetraalkylammonium carboxylates such as tetramethylammonium formate, tetramethylammonium acetate, tetramethylammonium triflate, tetrabutylammonium acetate, and tetrabutylammonium triflate; tetraalkylammonium sulfonates such as tetramethylammonium sulfonate and tetrabutylammonium sulfonate; and the like. Preferred cure catalysts are tetraalkylammonium halides, and more preferably tetraalkylammonium chlorides. Such quaternary ammonium salts are generally commercially available, such as from Sigma-Aldrich, or may be prepared by procedures known in the art. Such optional curing catalysts are used in the present compositions in an amount of from 0 to 10% of total solids, preferably from 0.01 to 7% of total solids, and more preferably from 0.05 to 5% of total solids.

Coating enhancers are optionally added to the present compositions to improve the quality of a film or layer of the composition that is coated on a substrate. Such coating enhancers may function as plasticizers, surface leveling agents, and the like. Such coating enhancers are well-known to those skilled in the art, and are generally commercially available. Exemplary coating enhancers are: long chain alkanols such as oleyl alcohol, cetyl alcohol, and the like; glycols such as tripropylene glycol, tetraethylene glycol, and the like; and surfactants. While any suitable surfactant may be used as a coating enhancer, such surfactants are typically non-ionic. Exemplary non-ionic surfactants are those containing an alkyleneoxy linkage, such as ethyleneoxy, propyleneoxy, or a combination of ethyleneoxy and propyleneoxy linkages. It is preferred that one or more coating enhancers are used in the present compositions. The coating enhancers are typically used in the present compositions in an amount of 0 to 10% of total solids, preferably from 0.5 to 10% of total solids, and more preferably from 1 to 8% of total solids.

One or more stabilizers may optionally be added to the present compositions. Such stabilizers are useful for preventing unwanted hydrolysis or condensation of the silicon-containing moieties during storage. A variety of such stabilizers are known, and preferably the silicon-containing polymer stabilizer is an acid. Suitable acid stabilizers for the siloxane polymers include, without limitation, carboxylic acids, carboxylic acid anhydrides, mineral acids, and the like. Exemplary stabilizers include oxalic acid, malonic acid, malonic anhydride, malic acid, maleic acid, maleic anhydride, fumaric acid, citraconic acid, glutaric acid, glutaric anhydride, adipic acid, succinic acid, succinic anhydride, and nitric acid. It was surprisingly found that organic blend polymers comprising as polymerized units one or more monomers of formula (1b) were stable in the present coating compositions in the presence of such silicon-containing polymer acid stabilizers. Such stabilizers are used in an amount of 0 to 20% of total solids, preferably from 0.1 to 15% of total solids, more preferably from 0.5 to 10% of total solids, and yet more preferably from 1 to 10% of total solids.

The compositions of the invention are prepared by combining the one or more present condensed polymers; one or more solvents; and any optional components, in any order. The compositions may be used as is, or may be further purified, such as by filtration.

The process of the present invention comprises (a) coating a substrate with a composition comprising (1) a condensate and/or hydrolyzate of a polymer comprising as polymerized units (i) one or more polymers comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and wherein the are polymer is free of a pendent aromatic ring having a substituent of the formula

where each Rx is independently H or a alkyl group of 1 to 15 carbons, where each Rx may be taken together form an aliphatic ring; Lg is H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group; a1=0 or 1; and * indicates the point of attachment to the aromatic ring, and (ii) one or more condensable silicon monomers, and (2) one or more solvents, to form a coating layer; (b) curing the coating layer to form a polymeric underlayer; (c) disposing a layer of a photoresist on the polymeric underlayer; (d) pattern-wise exposing the photoresist layer to form a latent image; (e) developing the latent image to form a patterned photoresist layer having a relief image therein; (f) transferring the relief image to the substrate; and (g) removing the polymeric underlayer by wet stripping.

A coating layer comprising any of the present compositions may be coated on an electronic device substrate by any suitable means, such as spin-coating, slot-die coating, doctor blading, curtain coating, roller coating, spray coating, dip coating, and the like. Spin-coating is preferred. In a typical spin-coating method, the present compositions are applied to a substrate which is spinning at a rate of 500 to 4000 rpm for a period of 15 to 90 seconds to obtain a desired layer of the condensed polymer on the substrate. It will be appreciated by those skilled in the art that the thickness of the condensed polymer mixture layer may be adjusted by changing the spin speed, as well as the solids content of the composition.

A wide variety of electronic device substrates may be used in the present invention, such as: packaging substrates such as multichip modules; flat panel display substrates; integrated circuit substrates; substrates for light emitting diodes (LEDs) including organic light emitting diodes (OLEDs); semiconductor wafers; polycrystalline silicon substrates; and the like. Such substrates are typically composed of one or more of silicon, polysilicon, silicon oxide, silicon nitride, silicon oxynitride, silicon germanium, gallium arsenide, aluminum, sapphire, tungsten, titanium, titanium-tungsten, nickel, copper, and gold. Suitable substrates may be in the form of wafers such as those used in the manufacture of integrated circuits, optical sensors, flat panel displays, integrated optical circuits, and LEDs. As used herein, the term “semiconductor wafer” is intended to encompass “an electronic device substrate,” “a semiconductor substrate,” “a semiconductor device,” and various packages for various levels of interconnection, including a single-chip wafer, multiple-chip wafer, packages for various levels, or other assemblies requiring solder connections. Such substrates may be any suitable size. Preferred wafer substrate diameters are 200 mm to 300 mm, although wafers having smaller and larger diameters may be suitably employed according to the present invention. As used herein, the term “semiconductor substrate” includes any substrate having one or more semiconductor layers or structures which may optionally include active or operable portions of semiconductor devices. A semiconductor device refers to a semiconductor substrate upon which at least one microelectronic device has been or is being batch fabricated.

After being coated on the substrate, the coating layer is optionally soft-baked at a relatively low temperature to remove any solvent and other relatively volatile components from the underlayer. Typically, the substrate is baked at a temperature of ≤200° C., preferably from 100 to 200° C., and more preferably from 100 to 150° C. The baking time is typically from 10 seconds to 10 minutes, preferably from 30 seconds to 5 minutes, and more preferably from 60 to 90 seconds. When the substrate is a wafer, such baking step may be performed by heating the wafer on a hot plate. Such soft-baking step may be performed as part of the curing of the coating layer, or may be omitted altogether.

The coating layer comprising the present condensed polymers is then cured to form an underlayer. The coating layer is sufficiently cured such that the film does not intermix with a subsequently applied organic layer, such as a photoresist or other organic layer disposed directly on the coating layer, while still maintaining the desired antireflective properties (n and k values) and etch selectivity of the underlayer film. The coating layer may be cured in an oxygen-containing atmosphere, such as air, or in an inert atmosphere, such as nitrogen and under conditions, such as heating, sufficient to provide a cured underlayer. This curing step is conducted preferably on a hot plate-style apparatus, although oven curing may be used to obtain equivalent results. Typically, such curing is performed by heating the condensed polymer layer at a curing temperature of ≤350° C., and preferably 200 to 250° C. Alternatively, a two-step curing process or a ramped temperature curing process may be used. Such two-step and ramped temperature curing conditions are well-known to those skilled in the art. The curing temperature selected should be sufficient for any thermal acid generator used to liberate acid to aid in curing of the condensed polymer film. The curing time may be from 10 seconds to 10 minutes, preferably from 30 seconds to 5 minutes, more preferably from 45 seconds to 5 minutes, and yet more preferably from 45 to 90 seconds. The choice of final curing temperature depends mainly upon the desired curing rate, with higher curing temperatures requiring shorter curing times. Following this curing step, the underlayer surface may optionally be passivated by treatment with a passivating agent such as a disilazane compound, such as hexamethyldisilazane, or by a dehydration bake step to remove any adsorbed water. Such passivating treatment with a disilazane compound is typically performed at 120° C.

After curing of the coating layer comprising the condensed polymer to form an underlayer, one or more processing layers, such as photoresists, hardmask layers, bottom antireflective coating (or BARC) layers, and the like, may be disposed on the underlayer. For example, a photoresist layer may be disposed, such as by spin coating, directly on the surface of the underlayer. Alternatively, a BARC layer may be coated directly on the underlayer, followed by curing of the BARC layer, and coating a photoresist layer directly on the cured BARC layer. In another alternative, an organic underlayer is first coated on a substrate and cured, a condensed polymer layer of the invention is then coated on the cured organic underlayer, the coating layer is then cured to form an underlayer, an optional BARC layer may be coated directly on the underlayer, followed by curing of the optional BARC layer, and coating a photoresist layer directly on the cured BARC layer. A wide variety of photoresists may be suitably used, such as those used in 193 nm lithography, such as those sold under the EPIC™ brand available from Dow Electronic Materials (Marlborough, Mass.). Suitable photoresists may be either positive tone development or negative tone development resists, or may be conventional negative resists. The photoresist layer is then imaged (exposed) using patterned actinic radiation, and the exposed photoresist layer is then developed using the appropriate developer to provide a patterned photoresist layer. The pattern is next transferred from the photoresist layer to any optional BARC layer, and then to the underlayer by an appropriate etching technique, such as dry etching with an appropriate plasma. Typically, the photoresist is also removed during such etching step. Next, the pattern is transferred to any organic underlayer present using an appropriate technique, such as dry etching with O₂ plasma, and then to the substrate as appropriate. Following these pattern transfer steps, the underlayer, and any optional organic underlayers are removed using conventional techniques. The electronic device substrate is then further processed according to conventional means.

The present compositions provide underlayers having good etch resistance and high silicon content (≤45% Si, and preferably from 0.5 to 30% Si). The coating layers comprising the present condensed polymers and underlayers described herein are wet strippable. By “wet strippable” is meant that the coating layers and underlayers of the invention are removed, and preferably substantially removed (≥95% of film thickness), by contacting the coating layer or underlayer with conventional wet stripping compositions, such as: (1) an aqueous base composition, such as aqueous alkali (typically about 5%) or aqueous tetramethylammonium hydroxide (typically ≥5 wt %), (2) aqueous fluoride ion strippers such as ammonium fluoride/ammonium bifluoride mixtures, (3) a mixture of mineral acid, such as sulfuric acid or hydrochloric acid, and hydrogen peroxide, or (4) a mixture of ammonia, water and optionally hydrogen peroxide. A particular advantage of the present polymers, and particularly of the present underlayers, is that they are wet strippable upon contact with a mixture of ammonia and hydrogen peroxide. A suitable mixture of sulfuric acid and hydrogen peroxide is concentrated sulfuric acid+30% hydrogen peroxide. A wide range of ammonia and water mixtures may be used. A suitable mixture of ammonia, water and hydrogen peroxide is a mixture of ammonia+hydrogen peroxide+water in a weight ratio of 1:1:5 to 1:10:50, such as ratios of 1:1:10, 1:1:40, 1:5:40 or 1:1:50. Preferably, ≥97%, and more preferably ≥99%, of the film thickness of the polymer layer or underlayer is removed by contacting the polymer layer or siloxane underlayer with either (i) mixture of sulfuric acid and hydrogen peroxide or (ii) a mixture of ammonium hydroxide and hydrogen peroxide.

Another advantage of the present condensed polymer layers is that they are easily removed to allow re-work of the substrate, such as a wafer. In such a re-work process, a composition described above comprising one or more condensed polymers of the invention is coated on a substrate. The coated polymer layer is then optionally soft-baked, and then cured to form an underlayer. Next, a photoresist layer is coated on the underlayer, and the resist layer is imaged and developed. The patterned resist layer and the underlayer may then each be removed to allow the wafer to be re-worked. The underlayer is contacted with any of the above-described wet stripping compositions, such as aqueous tetramethylammonium hydroxide compositions (typically ≥5 wt %) and aqueous fluoride ion strippers such as ammonium fluoride/ammonium bifluoride mixtures, at a suitable temperature to remove the underlayer to provide the substrate free, or substantially free, of underlayer and readily undergo additional re-work as may be necessary. Such re-work includes coating another layer of the present condensed polymers on the substrate and processing the polymer coating as described above.

A further advantage provided by the invention is a silicon-containing underlayer on a substrate, the silicon-containing underlayer comprising one or more present condensed polymers, wherein the silicon-containing underlayer has a removal rate of greater than 100 Å/sec. when contacted with a 1/1/40 wt/wt/wt mixture of 30% NH₄OH/30% H₂O₂/water for 5 minutes at 70° C. Preferably, such silicon-containing underlayer has a removal rate of at least 125, more preferably at least 150, yet more preferably at least 200, and even more preferably at least 250 Å/min. Preferably, the present condensed polymers comprise as polymerized units one or more second unsaturated monomers as described above. More preferably, such condensed polymers are free of a pendent aromatic ring having a substituent of the formula

where each Rx is independently H or a alkyl group of 1 to 15 carbons, where each Rx may be taken together form an aliphatic ring; Lg is H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group; a1=0 or 1; and * indicates the point of attachment to the aromatic ring.

COMPARATIVE EXAMPLE 1

Hydrochloric acid (6.15 g of 12.1N) in water (156 g) was added to a mixture of methyltrimethoxysilane (99.80 g), phenyltrimethoxysilane (50.41 g), vinyltrimethoxysilane (62.75 g), tetraethyl orthosilicate (294 g) and 2-propanol (467 g) over 10 minutes. The reaction mixture was stirred at room temperature for 1 hour, heated to reflux for 24 hours and cooled to room temperature. The solution was diluted with propylene glycol monoethyl ether (PGEE) (800 g) and low boiling reaction mixture components were removed under reduced pressure. The resulting solution was diluted with PGEE to afford a final 10 wt % solution of Comparative Polymer 1 (M_(w)=9000 Da).

EXAMPLE 1: PREPARATION OF POLYMER 1

A solution of tert-butyl methacrylate (tBMA), (173 g), gamma butyrolactone (GBLMA), (166 g) and 3-(trimethoxysilyl)propyl methacrylate (TMSPMA), (60.6 g) dissolved in 1,3-dioxolane (304 g) and a solution of V-65 initiator (60.6 g) dissolved in 2:1 v/v tetrahydrofurane/acetonitrile (60.6 g) were both added dropwise over 2 hours to 3-dioxolane (710 g) at 75° C. under a nitrogen blanket. After addition the reaction solution was held at 75° C. for an additional two hours, cooled to room temperature and precipitated into heptanes:MTBE (1:1 v/v, 14 L). The precipitated polymer was collected by vacuum filtration and vacuum oven dried for 24 hours to afford Polymer 1 (tBMA/GBLMA/TMSPMA 50/40/10) as a white solid (271 g, 68%). M_(w) was determined by GPC relative to polystyrene standard and was found to be 5700 Da.

EXAMPLE 2

Polymers 2 to 12 and Comparative Polymers 2 to 4, reported in Table 2 below, were synthesized according to the procedure of Example 1 using the monomers listed in Table 1 below. The amount of each monomer used is reported in Table 2 in mol %. Polymers 2 to 12 were isolated in 20-99% yield and had the M_(w) reported in Table 2.

TABLE 1

Monomer 1

Monomer 2

Monomer 3

Monomer 4

Monomer 5

Monomer 6

Monomer 7

Monomer 8

Monomer 9

Monomer 10

Monomer 11

Monomer 12

Monomer 13

Monomer 14

TABLE 2 Monomer A Monomer B Monomer C Monomer D Monomer E Polymer (mol %) (mol %) (mol %) (mol %) (mol %) M_(w) Comparative Monomer 4 Monomer 7 4000 Polymer 2 (40) (60) Comparative Monomer 2 Monomer 3 Monomer 4 4000 Polymer 3 (50) (25) (25) Comparative Monomer 2 Monomer 3 Monomer 4 Monomer 10 4000 Polymer 4 (25) (25) (25) (25) 2 Monomer 1 Monomer 2 Monomer 3 14000 (10) (50) (40) 3 Monomer 1 Monomer 2 Monomer 3 Monomer 4 5400 (10) (50) (25) (15) 4 Monomer 1 Monomer 2 Monomer 4 Monomer 6 5100 (10) (55) (20) (15) 5 Monomer 1 Monomer 2 Monomer 3 Monomer 6 5400 (10) (50) (25) (15) 6 Monomer 1 Monomer 2 Monomer 3 Monomer 4 Monomer 6 4300 (10) (50) (25)  (5) (10) 7 Monomer 1 Monomer 2 Monomer 3 4000 (10) (40) (50) 8 Monomer 1 Monomer 2 Monomer 3 Monomer 7 4000 (10) (40) (40) (10) 9 Monomer 1 Monomer 2 Monomer 3 4300 (20) (50) (30) 10 Monomer 1 Monomer 2 Monomer 3 Monomer 4 Monomer 8 4900 (10) (50) (25)  (5) (10) 11 Monomer 1 Monomer 2 Monomer 5 Monomer 6 5700 (10) (50) (25) (15) 12 Monomer 1 Monomer 2 Monomer 5 Monomer 4 Monomer 6 6800 (10) (50) (25)  (5) (10)

EXAMPLE 3

The procedure of Example 2 is repeated and is expected to provide Polymers 13-18 reported in Table 3. The monomer numbers reported in Table 3 refer to the monomers in Table 1 of Example 2.

TABLE 3 Monomer A Monomer B Monomer C Monomer D Monomer E Polymer (mol %) (mol %) (mol %) (mol %) (mol %) 13 Monomer 1 Monomer 2 Monomer 3 Monomer 4 (5) Monomer 9 (10) (50) (25) (10) 14 Monomer 2 Monomer 3 Monomer 4 Monomer 12 (45) (25) (15) (15) 15 Monomer 2 Monomer 4 Monomer 5 Monomer 8 Monomer 11 (30) (25) (25) (10) (10) 16 Monomer 4 Monomer 7 Monomer 9 (5) Monomer 11 Monomer 14 (25) (25) (10) (35) 17 Monomer 2 Monomer 3 Monomer 4 Monomer 13 (50) (25) (15) (10) 18 Monomer 1 (5) Monomer 2 Monomer 4 Monomer 5 Monomer 13 (50) (15) (20) (10)

EXAMPLE 4

A solution of hydrochloric acid (37 wt % in water, 7.76 g) in water (25.9 g) was added over 10 minutes to a mixture of TEOS (63.5 g, 50 mol %) and Polymer 1 from Example 1 (50.0 g, 50 mol %) in THF (270 g) and stirred at room temperature for 1 hour. The reaction mixture was heated to 63° C. for 20 hours and then cooled to room temperature. PGEE (200 g) was added, the volatile species removed under reduced pressure, and the resulting solution was diluted with PGEE to deliver Condensed Polymer 1 (10 wt % in PGEE, 600 g) as a clear solution. M_(w) was determined by GPC relative to polystyrene standard (28,100 Da).

EXAMPLE 5

Condensed Polymers 2 to 26, reported in Table 5 below, were synthesized according to the procedure of Example 4 using Polymers 1 to 12 from Examples 1 and 2 and the monomers listed in Table 4 below. The amount of each monomer used is reported in Table 5 in mol %. Condensed Polymers 2 to 12 were isolated in 20-99% yield and had the M_(w) reported in Table 5.

TABLE 4

Monomer 1S

Monomer 2S

Monomer 3S

Monomer 4S

Monomer 5S

Monomer 6S

Monomer 7S

TABLE 5 Con- Monomer densed Polymer Monomer A Monomer B D Polymer (mol %) (mol %) (mol %) (mol %) M_(w) 2 1 (45) Monomer 1S 22,700 (55) 3 1 (26) Monomer 1S Monomer 2S Monomer 12,400 (50) (9) 3S (15) 4 1 (50) Monomer 1S 52,800 (50) 5 1 (50) Monomer 1S 40,300 (50) 6 3 (50) Monomer 1S 26,600 (50) 7 2 (50) Monomer 1S 100,000 (50) 8 2 (50) Monomer 1S 30,000 (50) 9 4 (50) Monomer 1S 20,000 (50) 10 5 (50) Monomer 1S 22,000 (50) 11 6 (50) Monomer 1S 20,500 (50) 12 6 (50) Monomer 1S Monomer 2S 11,100 (40) (10) 13 9 (40) Monomer 1S Monomer 2S 25,000 (50) (10) 14 1 (40) Monomer 1S 27,700 (60) 15 1 (30) Monomer 1S 25,700 (70) 16 7 (50) Monomer 1S 29,000 (50) 17 8 (50) Monomer 1S 27,000 (50) 18 1 (60) Monomer 1S 40,600 (40) 19 9 (50) Monomer 1S 39,900 (50) 20 1 (30) Monomer 1S Monomer 2S 24,000 (65) (5) 21 11 (50)  Monomer 1S 20,200 (50) 22 12 (50)  Monomer 1S 18,700 (50) 23 1 (50) Monomer 1S Monomer 4S 25,000 (40) (10) 24 1 (50) Monomer 1S Monomer 5S 25,000 (40) (10) 25 1 (50) Monomer 1S Monomer 5S 44,000 (40) (10) 26 1 (50) Monomer 1S Monomer 7S 24,600 (40) (10)

EXAMPLE 6

The following components were combined: 3.277 g of Condensed Polymer 2 as component 1; 0.77 g of a 0.1 wt % solution of tetrabutylammonium chloride in PGEE as component 2; 4.325 g of PGEE as component 3; and 8.85 g of 2-hydroxyisobutyric acid methyl ester as component 4. The mixture was filtered through 0.2 μm polytetrafluoroethylene syringe to provide Formulation 1.

EXAMPLE 7

The procedure of Example 6 was repeated to prepare Formulations 2 to 26 reported in Table 6. In Table 6, Component 1 refers to the polymer added to each Formulation, Component 2 is 0.1 wt % solution of tetrabutylammonium chloride in PGEE, Component 3 is PGEE, and Component 4 is 2-hydroxyisobutyric acid methyl ester. Component 5 is a 10 wt % solution of any Comparative Polymer in an organic solvent.

TABLE 6 Amount of Amount of Amount of Component 1 Component 2 Component 3 Component 4 Component 5 Formulation (g) (g) (g) (g) (g) Comparative Comparative 0.640 5.66 8.24 Formulation 1 Polymer 1 (2.38) Comparative Comparative 0.777 5.36 7.81 Comparative Formulation 2 Polymer 1 Polymer 2 (1.73) (1.15) Comparative Comparative 0.480 18.0 3.95 Comparative Formulation 3 Polymer 1 Polymer 3 (3.10) (0.665) Comparative Comparative 1.07 67.9 79.0 Comparative Formulation 4 Polymer 1 Polymer 4 (19.8) (19.8) 2 Condensed 0.777 3.93 8.85 Polymer 2 (3.28) 3 Condensed 0.777 4.33 8.85 Polymer 3 (2.88) 4 Condensed 8.64 37.7 98.3 Polymer 4 (42.4) 5 Condensed 0.777 4.33 8.85 Polymer 5 (2.88) 6 Condensed 0.777 4.33 8.85 Polymer 6 (2.88) 7 Condensed 0.777 4.33 8.85 Polymer 7 (2.88) 8 Condensed 0.777 4.33 8.85 Polymer 8 (2.88) 9 Condensed 0.777 4.33 8.85 Polymer 9 (2.88) 10 Condensed 0.777 4.33 8.85 Polymer 10 (2.88) 11 Condensed 0.777 4.33 8.85 Polymer 11 (2.88) 12 Condensed 0.777 4.33 8.85 Polymer 12 (2.88) 13 Condensed 0.777 4.33 8.85 Polymer 13 (2.88) 14 Condensed 0.777 3.47 8.85 Polymer 14 (3.74) 15 Condensed 0.777 4.33 8.85 Polymer15 (2.88) 16 Condensed 0.777 4.33 8.85 Polymer 16 (2.88) 17 Condensed 0.777 4.33 8.85 Polymer 17 (2.88) 18 Condensed 0.777 4.33 8.85 Polymer 18 (2.88) 19 Condensed 0.777 4.33 8.85 Polymer 19 (2.88) 20 Condensed 0.777 4.33 8.85 Polymer 20 (2.88) 21 Condensed 0.777 4.33 8.85 Polymer 21 (2.88) 22 Condensed 0.777 4.33 8.85 Polymer 22 (2.88) 23 Condensed 0.777 4.24 8.85 Polymer 23 (2.96) 24 Condensed 0.777 4.33 8.85 Polymer 24 (2.88) 25 Condensed 0.777 4.33 8.85 Polymer 25 (2.88) 26 Condensed 0.777 4.33 8.85 Polymer 26 (2.45)

EXAMPLE 8

Formulations from Example 7 were spin-coated on a bare 200 mm silicon wafers at 1500 rpm and baked at 240° C. for 60 seconds using an ACT-8 Clean Track (Tokyo Electron Co.). The thickness of each coated film after baking of was measured with an OptiProbe™ instrument from Therma-wave Co. Each coated sample was then evaluated for SC-1 wet strippability using a 1/1/40 wt/wt/wt mixture of 30% NH₄OH/30% H₂O₂/water. The SC-1 mixture was heated to 70° C., and coupons of each coated wafer were immersed into the solution for 5 min. The coupons were removed from the SC-1 mixture and rinsed with deionized water, and the film thickness was again measured. The film thickness loss for each sample was calculated as the difference in film thickness before and after contact with the stripping agent. A separate film prepared as described above was optionally tested for SC-1 strippability after etching. Etching was performed for 60 seconds using RIE790 from Plasma-Therm Co. with oxygen gas, 25 sscm flow, 180 W of power, and 6 mTorr of pressure. The stripping results, obtained as the rate of film removal in Å/min, are reported in Table 7. A stripping rate of 0 to 1 Å/min. was considered as “no etch”. In Table 7, “⋄” denotes a stripping rate of >1 to 10 Å/min, “▪” denotes a stripping rate of >10 to 50 Å/sec, “□” denotes a stripping rate of >50 to 100 Å/min, “▴” denotes a stripping rate of >100 to 250 Å/min, and “Δ” denotes a stripping rate of >250 Å/min.

TABLE 7 Formulation Example Before Etch (Å/min) After Etch (Å/min) Comparative Formulation 1 No etch No etch Comparative Formulation 2 ⋄ ▪ Comparative Formulation 3 □ ▪ Comparative Formulation 4 ⋄ □ 2 Δ ▴ 3 ▴ ▪ 4 Δ Δ 5 Δ Δ 6 Δ Δ 7 ▴ Δ 8 ▴ Δ 9 □ ▴ 10 ▴ ▴ 11 Δ ▴ 12 ⋄ ▴ 13 □ ▴ 14 Δ Δ 15 Δ Δ 16 Δ Δ 17 ▴ Δ 18 Δ Δ 19 ▴ ▴ 20 Δ Δ 21 ▴ Δ 22 ▴ Δ 23 ▪ □ 24 □ □ 25 □ □ 26 ▴ Δ

COMPARATIVE EXAMPLE 2

A solution of tert-butyl methacrylate (tBMA), (173 g), gamma butyrolactone (GBLMA), (166 g) and 3-(trimethoxysilyl)propyl methacrylate (TMSPMA), (60.6 g) dissolved in 1,3-dioxolane (304 g) and a solution of V-65 initiator (60.6 g) dissolved in 2:1 v/v tetrahydrofurane/acetonitrile (60.6 g) were both added dropwise over 2 hours to 3-dioxolane (710 g) at 75° C. under a nitrogen blanket. After addition the reaction solution was held at 75° C. for an additional two hours, cooled to room temperature and precipitated into heptanes:MTBE (1:1 v/v, 14 L). The precipitated polymer was collected by vacuum filtration and vacuum oven dried for 24 hours to afford Comparative Polymer 5 (tBMA/GBLMA/TMSPMA 50/40/10) as a white solid (271 g, 68%). M_(w) was determined by GPC relative to polystyrene standard and was found to be 5700 Da.

Comparative Polymer 5 (15 g, 91.5 mmol) and 35 g of tetrahydrofuran (THF) were added to a 250 mL 3-necked round bottom flask equipped with a thermocouple, an overhead stirrer, a water-cooling condenser, an addition funnel, a N₂ feed line, a bubbler, and a heating mantle. The mixture was stirred at room temperature until all the polymer was dissolved. In a separate container, hydrochloric acid (0.122 g, 1.235 mmol) and DI water (0.816 g, 45.2 mmol) were mixed together. The aqueous acid solution was charged to the reactor via addition funnel over 10 min at ambient temperature. The mixture was stirred at ambient temperature for 1 hr. Then, the temperature was adjusted to 63±2° C. over 30 minutes to initiate reflux. The solution was stirred at reflux temperature for 4 hr. The reaction mixture was allowed to cool to room temperature overnight with continued stirring. Next, the solution was diluted with PGEE and concentrated on a rotary evaporator under reduced pressure to provide Condensed Comparative Polymer 5. The solution was treated with Amberlite IRN150 ion exchange resin (10 wt % of final weight) by rolling for 1 hr., filtered using 0.2 polytetrafluoroethylene (PTFE) filter, and stored in a plastic container at −10° C. Analysis of Condensed Comparative Polymer 5 provided a M_(w) of 51,000 Da, and a PDI of 4.3.

EXAMPLE 9

Films A-E were prepared by dispensing the compositions indicated in Table 8 below into separate three inch aluminum pans. Condensed Comparative Polymer 5 from Comparative Example 2 does not contain a separate condensable silicon monomer. Films C and E were formed from compositions containing tetraethylorthosilicate (“TEOS”) which was not condensed with the polymer prior to being dispensed into the pan. The TEOS used in the formulations of Films C and W was an attempt to cure the film in-situ. The films were visually inspected for coating quality. The coating quality of the films is also reported in Table 8. Films C and E were heterogeneous, showing phase separation and non-uniformity, making such films unsuitable for underlayer applications.

TABLE 8 Condensable Silicon Film Polymer (g) Monomer (g) Solvent (g) Coating Quality A - Comparative Polymer 1 (0.10) — PGEE (0.90) Homogeneous B - Comparative Condensed — — Homogeneous Comparative Polymer 5 (1.0) C - Comparative Condensed TEOS (0.5) — Heterogeneous Comparative Polymer 5 (0.5) D - Invention Condensed — — Homogeneous Polymer 5 (1.0) E - Comparative Polymer 1 (0.05) TEOS (0.5) PGEE (0.045) Heterogeneous

Following visual inspection, each of the pans containing Films A to E was heated to 110° C. for 60 min. and the dried film was scraped off and analyzed by FTIR. The total FTIR peak area from 1770-1850 cm⁻¹ and from 1769-1650 cm⁻¹ for each of the films was integrated. Table 9 represents these areas as a percentage of the total peak area. These are the C═O bond stretch regions in the IR spectra and are indicative of film structure. Differences in these percentages indicate differences in the films. The data in Table 9 clearly show that Films A-C and E are similar to each other in structure as they have similar percentages of peak area in both regions, however Film D has a significantly higher percentage of peak area in the 1769-1650 cm⁻¹ range, indicating that Film D has a different film structure from the other films. Film D also has a stretch between 3000-3500 cm⁻¹ corresponding to silanol which is missing in the spectra of the other films. It is clear from the film quality, C═O integration, and the stretch between 3000-3500 cm⁻¹ that Film D is different from Films A-C and E.

TABLE 9 Integration 1770-1850 Integration 1769-1650 Film (cm⁻¹) (cm⁻¹) A - Comparative 36% 64% B - Comparative 33% 67% C - Comparative 32% 68% D - Invention 18% 82% E - Comparative 38% 62%

EXAMPLE 10

The formulations reported in Table 10 were prepared according to the procedure of Example 7, where Components 2, 3 and 4 are as defined in Example 7. In addition, each formulation contained 0.6 g of a coating enhancer and 0.38 g of carboxylic acids. Comparative Polymer 5 (from U.S. Pat. No. 8,932,953) was a condensation product of a t-butoxystyrene/TMSPMA (90/10) as a first component and a condensation product of TEOS as a second component, in a 1:1 ratio of first component to second component. Polymer 27 was tBMA/GBLMA/HEMA/BzMA/TMSPMA (50/25/5/10/10) and was prepared according to the general procedure of Example 1, where HEMA=hydroxyethyl methacrylate and BzMA=benzyl methacrylate. Polymer 27 was determined to have a M_(w) of 4010, and a PDI of 1.7. Condensed Polymer 27 was prepared according to the procedure of Example 4 using 50/50 molar amounts of Polymer 27 and TEOS, and was determined to have a M_(w) of 50,000, and a PDI of 4.1.

Formulations 27 and 28, and Comparative Formulation 5 were evaluated for strippability before etching according to the procedure of Example 8. The stripping results, obtained as the rate of film removal in Å/min, are reported in Table 10, where a negative number indicates swelling of the film.

TABLE 10 Amount of Amount of Amount of Component 1 Component 2 Component 3 Component 4 Before Etch Formulation (g) (g) (g) (g) (Å/min) Comparative Comparative 0.65 3.60 7.37 −49 Formulation 5 Polymer 5 (2.40) Formulation Condensed 0.65 3.60 7.37 >714 27 Polymer 1 (2.4) Formulation Condensed 0.65 3.60 7.37 >780 28 Polymer 27 (2.40) 

What is claimed is:
 1. A composition comprising: (a) one or more solvents; and (b) a condensate and/or hydrolyzate of (i) one or more polymers comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, one or more second unsaturated monomers having a chromophore moiety, and one or more third unsaturated monomers being free of a condensable silicon-containing moiety and having the formula (3)

wherein Z is chosen from an acid decomposable group, a C₄₋₃₀ organic residue bound to the oxygen through a tertiary carbon, a C₄₋₃₀ organic residue comprising an acetal functional group, and a monovalent organic residue having a lactone moiety; and R¹⁰ is independently chosen from H, C₁₋₄ alkyl, C₁₋₄ haloalkyl, halo, and CN, and (ii) one or more condensable silicon monomers, wherein the one or more polymers are free of a pendent aromatic ring having a substituent of the formula

where each Rx is independently H or a alkyl group of 1 to 15 carbons, where each Rx may be taken together form an aliphatic ring; Lg is H, an aliphatic monovalent hydrocarbon having 1 to 10 carbons, or a monovalent aromatic group; a1=0 or 1; and * indicates the point of attachment to the aromatic ring.
 2. The composition of claim 1 wherein at least one condensable silicon monomer has the formula (8) Si(R⁵⁰)_(p)(X)_(4-p)  (8) wherein p is an integer from 0 to 3; each R⁵⁰ is independently chosen from a C₁₋₃₀ hydrocarbyl moiety and a substituted C₁₋₃₀ hydrocarbyl moiety; and each X is independently chosen from halo, C₁₋₁₀ alkoxy, —OH, —O—C(O)—R⁵⁰, and —(O—Si(R⁵¹)₂)_(p2)—X¹; X¹ is independently chosen from halo, C₁₋₁₀ alkoxy, —OH, —O—C(O)—R⁵⁰; each R⁵¹ is independently chosen from R⁵⁰ and X; and p2 is an integer from 1 to
 10. 3. The composition of claim 1 wherein the condensable silicon-containing moiety has the formula *-L-SiR¹ _(b)Y¹ _(3-b) wherein L is a single covalent bond or a divalent linking group; each R¹ is independently chosen from H, C₁₋₁₀-alkyl, C₂₋₂₀-alkenyl, C₅₋₂₀-aryl, and C₆₋₂₀-aralkyl; each Y¹ is independently chosen from halogen, C₁₋₁₀-alkoxy, C₅₋₁₀-aryloxy, C₁₋₁₀-carboxy; b is an integer from 0 to 2; and * denotes the point of attachment to the polymer backbone.
 4. The composition of claim 3 wherein L is a divalent linking group.
 5. The composition of claim 4 wherein the divalent linking group comprises one or more heteroatoms chosen from oxygen and silicon.
 6. The composition of claim 4 wherein the divalent linking group is an organic radical having from 1 to 20 carbon atoms and optionally one or more heteroatoms.
 7. The composition of claim 3 wherein the divalent linking group has the formula —C(═O)—O-L¹- wherein L¹ is a single covalent bond or an organic radical having from 1 to 20 carbon atoms.
 8. The composition of claim 1 wherein at least one first unsaturated monomer has the formula (1)

wherein L is a single covalent bond or a divalent linking group; each R¹ is independently chosen from H, C₁₋₁₀-alkyl, C₂₋₂₀-alkenyl, C₅₋₂₀-aryl, and C₆₋₂₀-aralkyl; each of R² and R³ are independently chosen from H, C₁₋₄ alkyl, C₁₋₄ haloalkyl, halo, C₅₋₂₀-aryl, C₆₋₂₀ aralkyl, and CN; R⁴ is chosen from H, C₁₋₁₀ alkyl, C₁₋₁₀ haloalkyl, halo, C₅₋₂₀-aryl, C₆₋₂₀ aralkyl, and C(═O)R⁵; R⁵ is chosen from OR⁶ and N(R⁷)₂; R⁶ is chosen from H, and C₁₋₂₀ alkyl; each R⁷ is independently chosen from H, C₁₋₂₀ alkyl, and C₆₋₂₀ aryl; each Y¹ is independently chosen from halogen, C₁₋₁₀-alkoxy, C₅₋₁₀ -aryloxy, C₁₋₁₀-carboxy; and b is an integer from 0 to
 2. 9. The composition of claim 1 wherein the condensate and/or hydrolyzate further comprises as polymerized units one or more unsaturated monomers free of a condensable silicon-containing moiety having an acidic proton and having a pKa in water from −5 to
 13. 10. The composition of claim 1 wherein the chromophore moiety is pendent from the polymer backbone.
 11. The composition of claim 10 wherein the chromophore moiety is chosen from pyridyl, phenyl, naphthyl, acenaphthyl, fluorenyl, carbazolyl, anthracenyl, phenanthryl, pyrenyl, coronenyl, tetracenyl, pentacenyl, tetraphenyl, benzotetracenyl, triphenylenyl, perylenyl, benzyl, phenethyl, tolyl, xylyl, styrenyl, vinylnaphthyl, vinylanthracenyl, dibenzothiophenyl, thioxanthonyl, indolyl, and acridinyl.
 12. A method comprising (a) coating a substrate with a composition of claim 1; (b) curing the coating layer to form a polymeric underlayer; (c) disposing a layer of a photoresist on the polymeric underlayer; (d) pattern-wise exposing the photoresist layer to form a latent image; (e) developing the latent image to form a patterned photoresist layer having a relief image therein; (f) transferring the relief image to the substrate; and (g) removing the polymeric underlayer by wet stripping.
 13. The method of claim 12 wherein the polymeric underlayer is removed by wet stripping.
 14. The method of claim 12 further comprising disposing a bottom antireflective coating layer directly on the polymeric underlayer and then curing the antireflective coating layer and then disposing the photoresist layer directly on the cured antireflective coating layer. 